Effect of Plaslma Off Time on the Structure and Electrical Properties of Hydrogenated Amorphous Silicon Carbide Films Prepared by Pulse-Modulated Plasma Deposition : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-12-15
著者
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MIZUTANI Teruyoshi
Department of Electrical Engineering, Nagoya University
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水谷 照吉
愛知工業大学電気工学科
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Mizutani T
Nagoya Univ. Nagoya‐shi Jpn
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Mizutani Takashi
Department Of Health Sciences Yamanashi Medical University
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Mizutani Teruyoshi
Department Of Electrical Engineering Aichi Institute Of Technology
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Suzuoki Y
Center For Integrated Research In Science And Engineering Nagoya University
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Suzuoki Yasuo
Center For Integrated Research In Science And Engineering Nagoya University
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TABATA Akimori
Department of Electrical Engineering, Nagoya University
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SEKITO Makoto
Department of Electrical Engineering, Nagoya University
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Tabata Akimori
Department Of Electrical Engineering Nagoya University
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Sekito Makoto
Department Of Electrical Engineering Nagoya University
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Mizutani Teruyoshi
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0529, Japan
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Tabata Akimori
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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