Organic field-effect transistors based on vapor-deposited pentacene and soluble pentacene precursor (第48回真空に関する連合講演会プロシーディングス--2007年11月14日〜16日,東京)
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概要
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We report the characterization and comparison of organic field-effect transistors (OFETs) based on vapor-deposited pentacene and a soluble pentacene precursor 13,6-N-Sulfinylacetamidopentacene in solution. The gate insulator, poly (4-vinylphenol) (PVP), was crosslinked by heat or UV irradiation. Spin-coated pentacene precursor film changed to pentacene film after heating in vacuum or nitrogen; and the film structure was characterized by the UV-visible absorption spectra and X-ray diffraction (XRD). Results show that the film structure of heated pentacene precursor is similar to that of the vapor-deposited pentacene but not exactly the same. Soluble pentacene precursor shows easier processability for fabrication of high-performance solution-processable OFETs. The determined carrier mobility for vapor-deposited pentacene film is in the order of 10-1 cm2/Vs, and for soluble pentacene precursor is in the order of 10-2 cm2/Vs.
- 2008-03-20
著者
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MIZUTANI Teruyoshi
Department of Electrical Engineering, Nagoya University
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WANG Xin
Department of Electrical Engineering, Aichi Institute of Technology
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OCHIAI Shizuyasu
Department of Electrical Engineering, Aichi Institute of Technology
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KOJIMA Kenzo
Department of Electrical Engineering, Aichi Institute of Technology
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OHASHI Asao
Department of Electrical Engineering, Aichi Institute of Technology
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Kojima Kenzo
Department Of Electrical Engineering Aichi Institute Of Technology
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Mizutani Teruyoshi
Department Of Electrical Engineering School Of Engineering Nagoya University
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Ochiai Shizuyasu
Dep. Of Electrical Engineering Aichi Inst. Of Technol.
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Ochiai Shizuyasu
Aichi Inst. Technol. Aichi Jpn
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Ohashi A
Department Of Electrical Engineering Aichi Institute Of Technology
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Ohashi Asao
Department Of Electrical Engineering Aichi Institute Of Technology
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Kojima K
Department Of Electrical Engineering Aichi Institute Of Technology
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森 竜雄
Nagoya Univ. Aichi Jpn
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Mori T
Department Of Electrical Engineering Greduate School Of Engineering Nagoya University
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Miyahara Tsuneaki
Photon Factory National Laboratory For High Energy Physics (kek)
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Mizokawa Takashi
Department Of Physics And Department Of Complexity Science And Engineering University Of Tokyo:hiros
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Mori Tatsushi
Department Of Electronics And Information Science Faculty Of Engineering And Design Kyoto Institute
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Mizutani T
Nagoya Univ. Nagoya‐shi Jpn
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Wang Xin
Department Of Electrical Engineering Aichi Institute Of Technology
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Ochiai Shizuyasu
Department Of Electrical Engineering Aichi Institute Of Technology
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Mizutani Teruyoshi
Department Of Electrical Engineering Aichi Institute Of Technology
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Mitsuishi T
Utsunomiya Univ. Utsunomiya
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Wang Xin
Department Of Advanced Systems Control Engineering Graduate School Of Science And Engineering Saga U
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Mizutani Takashi
Nagoya Univ. Nagoya‐shi Jpn
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Takemura Masayuki
Japan Atomic Energy Agency Hyogo
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Mizutani Teruyoshi
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0529, Japan
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