Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
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概要
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The transport phenomena of ZnSe-Ge-I_2 system in the closed tube process are thermodynamically investigated by means of the general transport equations presented in a previous paper.^<1)> Calculations show that the nature of the transport reaction is mainly governed by the density of charged iodine. If the density is low enough, the main reaction is the thermal decomposition of ZnSe, while if it is high enough, the reaction is governed by the disproportionation reaction between GeI_2 and GeI_4. During the growth process a considerable amount of Ge is etched away by iodine vapor.
- 社団法人応用物理学会の論文
- 1966-07-15
著者
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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KAKEHI Masahiro
Department of Applied Biological Chemistry, The University of Tokyo
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Kakehi Masahiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Kakehi Masahiro
Department Of Applied Biological Chemistry The University Of Tokyo
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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KAKEHI Masahiro
Department of Electronics, Faculty of Engineering Nagoya University
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ARIZUMI Tetsuya
Department of Electronics, Faculty of Engineering Nagoya University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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