Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction
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概要
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The arsenic pressure dependence of surface diffusion of Ga adatoms in molecular beam epitaxy (MBE) on (111) B-(001) mesa-etched substrates was investigated by means of in situ scanning microprobe reflection high-energy electron diffraction (μ-RHEED). It was observed for the first time that the direction of Ga adatom migration from or to the (111)B sidewall is changed depending on the arsenic pressure. Furthermore, the diffusion length of Ga adatoms 011 the (001) surface along the [1^^-10] direction was found to vary with arsenic pressures exponentially; however, it was independent of the direction of lateral migration. The diffusion length of Ga adatoms on the (001) surface along the [1^^-10] direction varied from about 0.25μm to 1.2μm at 600℃ within our arsenic pressure range. This suggests that the lifetime of Ga adatoms before incorporation into the crystal on each surface depends strongly on arsenic pressure.
- 社団法人応用物理学会の論文
- 1993-08-15
著者
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Shen Xu-qiang
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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