Theoritical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs : Condensed Matter
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概要
- 論文の詳細を見る
The disappearance of RHEED intensity oscillation by increasing growth temperature in GaAs MBE on a stepped surface has been studied theoretically based on the 2d-nucleation and surface diffusion theories. By comparing the present and the published RHEED results, we get the surface diffusion length (λ_s) and the diffusion coefficient (D_s) of Ga atoms on the (100) GaAs surface respectively as λ_s[cm]=4.0×10^<-8>exp(0.3/kT) and D_s[cm^2/s]=1.6×10^<-2>exp(-1.1/kT).
- 社団法人応用物理学会の論文
- 1988-01-20
著者
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Cho Kyoung-ik
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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