AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_<1-x>Sb
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-07-15
著者
-
成塚 重弥
名城大学理工学部
-
NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
-
Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
-
Huang W
Univ. Sci. And Technol. China Anhui Chn
-
NARITSUKA Shigeya
Department of Electrical Engineering, Faculty of Engineering, The University of Tokyo
-
Nishinaga T
Department Of Materials Science And Engineering Faculty Of Science And Technology Meijo University
-
HUANG Weidong
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo Universit
-
Naritsuka Shigeya
Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo
-
Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
関連論文
- LPE法によるGe(111)表面のステップフリー化
- 26aC10 LPE法によるGe(111)メサ型パターン基板上ステップフリー表面の作製(結晶成長基礎,第34回結晶成長国内会議)
- ステップフリー基板作製を目指したメサ型パターン上のGe薄膜成長(半導体薄膜・表面)
- 17pB09 MBE法を用いたc-GaNの結晶成長(半導体エピ(4),第35回結晶成長国内会議)
- 01pB02 GaNドット構造の液滴エピタキシーにおけるアンモニア雰囲気中の熱処理効果(半導体エピ(3),第36回結晶成長国内会議)
- 26aC11 GaAs表面の窒化によるナノリソグラフィー用マスクの作製(結晶成長基礎,第34回結晶成長国内会議)
- 26aE02 ビーム誘起横方向成長を用いたGaAsマイクロ構造の成長(ナノエピシンポジウム,第34回結晶成長国内会議)
- 温度差法を用いたGaAs (001)マイクロチャンネルエピタキシーによる横方向成長(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- Thin Film and Epitaxial Crystal Growth(The 40th National Conference on Crystal Growth (NCCG-40) and the 16th International Conference on Crystal Growth (ICCG-16)/the 14th International Conference on Vapor Growth and Epitaxy (ICVGE-14),News of JACG)
- Dopant Segregation in Earth- and Space-Grown InP Crystals
- 温度差法を用いたGaAs (001)マイクロチャンネルエピタキシーによる横方向成長(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- 温度差法を用いたGaAs (001)マイクロチャンネルエピタキシーによる横方向成長(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
- SiC表面分解法におけるカーボンナノチューブ選択成長--高融点金属マスクを用いたパターニングの試み
- 表面分解法によるSiC単結晶表面からのカーボンナノチューブ生成--カーボンナノチューブと半導体の融合に向けて
- 02aB02 マイクロチャンネルエピタキシーによるAlGaAs横方向成長に関する研究(半導体エピ(4),第36回結晶成長国内会議)
- 02aB01 GaAsマイクチャンネルエピタキシーにおける"浮き上がり"効果に与えるSiO_2マスク作製方法の影響(半導体エピ(4),第36回結晶成長国内会議)
- 走査トンネル顕微鏡を用いたナノリソグラフィーのシミュレーション--シミュレーションプログラムの開発
- 17aB01 GaAs MCEにおける横方向成長層の"浮き上がり"に関する研究(半導体エピ(1),第35回結晶成長国内会議)
- GaAs MCEにおける横方向成長層の"浮き上がり"に関する研究
- 25aC01 分子線結晶成長その場反射率モニターによる共振器構造の評価(結晶評価・その場観察(1),第34回結晶成長国内会議)
- MBE成長AlGaAs系材料への酸素混入のメカニズム : エピキタシャル成長I
- リッジ基板を用いたGaAs低角入射分子線エピタキシー : 入射角の効果 : エピキタシャル成長I
- Si(001)基板上での非晶質GaAsバッファ層の結晶化メカニズム
- 融液成長Al_xGa_Sb におけるファセット部オフファセット部でのミクロな組成変動
- Si(001)表面ステップハンチングに及ぼすAs照射の効果とGaAsバッファ層の結晶化過程 : エピタキシャル成長III
- AlxGa1-xSb単結晶のたて型ブリッジマン成長
- 垂直型温度勾配凝固法によるGaSb単結晶中のTe分布-宇宙実験との比較-
- 23aB7 上ソースを用いたSi上のInPマイクロチャンネルエピタキシーの成長条件最適化(エピタキシャル成長II)
- 23aB6 2次元拡散シミュレーションによるInP液相マイクロチャネルエピタキシーの解析(エピタキシャル成長I)
- 23aB5 マイクロチャネルエピタキシにおける横方向成長層の合体と転位導入の抑制(エピタキシャル成長I)
- 窒化物半導体の結晶成長の現状と課題 : 光・電子デバイスの飛躍的な性能向上を目指して(日本結晶成長学会特別講演会)
- 量子ドットの使い道(量子ドットの使い道)
- 日本結晶成長学会の醍醐味(閑話休題)
- 結晶成長のフロンティアに向けて(ナノ構造・エピタキシャル成長分科会)(第2章 歴史,日本結晶成長学会創立30周年記念)
- 会員数の変遷が示す日本結晶成長学会発展への課題(第2章 歴史,日本結晶成長学会創立30周年記念)
- Numerical Model for Oxygen Incorporation into AlGaAs Layer Grown by Molecular Beam Epitaxy
- InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
- Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Solute Redistribution in Laser Crystallization in Concentrated InAs-GaAs Alloy
- Si Contamination in Epitaxial Boron Monophosphide
- Measurement of Specific Heat of Boron Monophosphide by AC Calorimetry
- Thermal Expansion Coefficient of Boron Monophosphide
- Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
- AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_Sb
- Properties of III-V Based Ferromagnetic Semiconductor (Ga_Mn_x) As : As Pressure Dependence
- Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction
- Sheet Resistivity of the Epitaxially Grown Germanium Layer
- Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
- A VISUAL CUE ENHANCES DIFFERENTIAL SENSITIVITY IN THE FEEDING BEHAVIOR OF DROSOPHILA(Physiology)(Proceeding of the Seventy-Third Annual Meeting of the Zoological Society of Japan)
- Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates
- LPE Lateral Overgrowth of GaP
- Epitaxial Lateral Overgrowth of GaAs by LPE : Condensed Matter
- The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask
- A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
- PL Property of ZnTe Grown by Chemical Transport and Its Growth Method Dependency
- Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys
- Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
- Theoritical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs : Condensed Matter
- Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
- Plasma Spreading and Turn-On Delay in a Power Thyristor
- Sharp-Flat Reversible Change of Top of Pyramid in GaAs Molecular Beam Epitaxy on (111)B Patterned Substrate : Semiconductors
- Precise Control of Growth of VCSEL Structure by using MBE in-situ Reflectance Monitor
- Comparative Ground Experiment of GaSb:Te Melt Growth to the Space Experiment by Chinese Recoverable Satellite
- Experimental Studies of Impurity Doping in Vapor Growth of Ge
- A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor
- Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
- Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs
- Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy
- Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
- MBE Growth of GaAs_Sb_x and In_yGa_As and Application of BCF Theory to Study the Alloy Composition : Condensed Matter
- Transport Reaction in Closed Tube Process
- Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process
- Modulation Molecular Beam Epitaxy under Constant Low As Pressure
- Computer Calculations of the Chemical Transport of GaSe in Closed Tubes
- Surface Morphology of LPE Grown InP
- Thermal Etching Effect of InP Substrate in LPE Saturation Process
- Direct Growth of Carbon Nanotubes on ZnO(0001) Substrate Surface using Alcohol Gas Source Method in High Vacuum (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy
- Low-Temperature Synthesis of Single-Walled Carbon Nanotubes in a High Vacuum Using Pt Catalyst in Alcohol Gas Source Method
- Surface Modification of GaN Substrate by Atmospheric Pressure Microplasma
- New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation
- Si LPE Lateral Overgrowth from a Ridge Seed
- Formation of Carbon Nanotube/n-Type 6H-SiC Heterojunction by Surface Decomposition of SiC and Its Electric Properties
- Low-Temperature Single-Walled Carbon Nanotube Growth from Pt Catalyst Using Alcohol Gas Source Method in High Vacuum
- Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal--Organic Molecular Beam Epitaxy
- Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence
- Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal-Organic Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Formation of Carbon Nanotube/n-Type 6H-SiC Heterojunction by Surface Decomposition of SiC and Its Electric Properties (Special Issue : Microprocesses and Nanotechnology)
- Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates
- Low-Temperature Single-Walled Carbon Nanotube Growth from Pt Catalyst Using Alcohol Gas Source Method in High Vacuum (Special Issue : Microprocesses and Nanotechnology)
- Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence