NARITSUKA Shigeya | Department of Electrical Engineering, Faculty of Engineering, The University of Tokyo

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概要

• 同名の論文著者
• Department of Electrical Engineering, Faculty of Engineering, The University of Tokyoの論文著者

関連著者

• NISHINAGA Tatau

  Department of Electronic Engineering, Faculty of Engineering, University of Tokyo

• Nishinaga Tatau

  Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo

• NARITSUKA Shigeya

  Department of Electrical Engineering, Faculty of Engineering, The University of Tokyo

• Naritsuka Shigeya

  Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo

• Nishinaga Tatau

  Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University

• 成塚 重弥

  名城大学理工学部

• Huang W

  Univ. Sci. And Technol. China Anhui Chn

• Nishinaga T

  Department Of Materials Science And Engineering Faculty Of Science And Technology Meijo University

• HUANG Weidong

  Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo Universit

• 成塚 重弥

  名城大・理工

• Nishinaga Tatau

  School Of Electrical Engineering And Electronics Toyohashi University Of Technology

• Tachikawa Masami

  Ntt Opto-electronics Laboratories

• MORI Hidehumi

  NTT Opto-electronics Laboratories

• Naritsuka S

  Meijo Univ. Nagoya Jpn

• HANDA Ibuki

  Department of Electronic Engineering, Graduate School of Engineering, The University of Tokyo

• Handa Ibuki

  Department Of Electronic Engineering Graduate School Of Engineering The University Of Tokyo

• Nishinaga Tatau

  Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo

• Nishinaga Tatau

  Department Of Electronic Engineering Graduate School Of Engineering The University Of Tokyo

• 成塚 重弥

  名城大学大学院理工学研究科

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著作論文

• InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
• Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
• AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_Sb
• Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates

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