InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-11-01

著者

• NISHINAGA Tatau

  Department of Electronic Engineering, Faculty of Engineering, University of Tokyo

• Nishinaga Tatau

  Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo

• Tachikawa Masami

  Ntt Opto-electronics Laboratories

• NARITSUKA Shigeya

  Department of Electrical Engineering, Faculty of Engineering, The University of Tokyo

• MORI Hidehumi

  NTT Opto-electronics Laboratories

• Naritsuka Shigeya

  Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo

• Nishinaga Tatau

  Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo

• Nishinaga Tatau

  Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University

関連論文

• Dopant Segregation in Earth- and Space-Grown InP Crystals
• Dislocation Generation of III-V Semiconductors by the Biaxial Stress in GaAs/SiO_2, InP /SiO_2 and III-V/Si Structure
• Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy
• InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
• Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
• The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
• Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
• Si Contamination in Epitaxial Boron Monophosphide
• Measurement of Specific Heat of Boron Monophosphide by AC Calorimetry
• Thermal Expansion Coefficient of Boron Monophosphide
• Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
• Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
• AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_Sb
• Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
• 1.5 μm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate
• Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction
• Sheet Resistivity of the Epitaxially Grown Germanium Layer
• Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
• Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates
• LPE Lateral Overgrowth of GaP
• Epitaxial Lateral Overgrowth of GaAs by LPE : Condensed Matter
• The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask
• A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
• PL Property of ZnTe Grown by Chemical Transport and Its Growth Method Dependency
• Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys
• Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
• Theoritical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs : Condensed Matter
• Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
• Plasma Spreading and Turn-On Delay in a Power Thyristor
• Sharp-Flat Reversible Change of Top of Pyramid in GaAs Molecular Beam Epitaxy on (111)B Patterned Substrate : Semiconductors
• Experimental Studies of Impurity Doping in Vapor Growth of Ge
• A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor
• Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
• Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs
• Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy
• Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
• MBE Growth of GaAs_Sb_x and In_yGa_As and Application of BCF Theory to Study the Alloy Composition : Condensed Matter
• Transport Reaction in Closed Tube Process
• Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process
• Modulation Molecular Beam Epitaxy under Constant Low As Pressure
• Computer Calculations of the Chemical Transport of GaSe in Closed Tubes
• Surface Morphology of LPE Grown InP
• Thermal Etching Effect of InP Substrate in LPE Saturation Process
• Direct Growth of Carbon Nanotubes on ZnO(0001) Substrate Surface using Alcohol Gas Source Method in High Vacuum (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy
• Low-Temperature Synthesis of Single-Walled Carbon Nanotubes in a High Vacuum Using Pt Catalyst in Alcohol Gas Source Method
• Surface Modification of GaN Substrate by Atmospheric Pressure Microplasma
• New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation
• Si LPE Lateral Overgrowth from a Ridge Seed
• Formation of Carbon Nanotube/n-Type 6H-SiC Heterojunction by Surface Decomposition of SiC and Its Electric Properties
• Low-Temperature Single-Walled Carbon Nanotube Growth from Pt Catalyst Using Alcohol Gas Source Method in High Vacuum
• Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal--Organic Molecular Beam Epitaxy
• Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence
• Effect of Supply Direction of Precursors on a-Plane GaN Low Angle Incidence Microchannel Epitaxy by Ammonia-Based Metal-Organic Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
• Formation of Carbon Nanotube/n-Type 6H-SiC Heterojunction by Surface Decomposition of SiC and Its Electric Properties (Special Issue : Microprocesses and Nanotechnology)
• Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates
• Low-Temperature Single-Walled Carbon Nanotube Growth from Pt Catalyst Using Alcohol Gas Source Method in High Vacuum (Special Issue : Microprocesses and Nanotechnology)
• Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence

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