Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-09-01

著者

• TACHIKAWA Maki

  Department of Physics, Faculty of Science, The University of Tokyo

• Tachikawa M

  Meiji Univ. Kawasaki Jpn

• Tachikawa Maki

  Department Of Physics The University Of Tokyo

• Mori H

  Osaka Univ. Osaka Jpn

• ITOH Yoshio

  NTT Opto-electronics Laboratories

• MAKITA Hiroshi

  Kochi University of Technology

• SUGO Mitsuru

  NTT Opto-electronics Laboratories

• Mori H

  Research Center For Ultra-high Voltage Electron Microscopy Osaka University

• Itoh Y

  Imra Material R&d Co. Ltd.

• Sugo Mitsuru

  Research Institute Of Applied Electricity Hokkaido University:nippon Telegraph And Telephone Public

• Tachikawa Maki

  Department Of Physics Faculty Of Science The University Of Tokyo

• Tachikawa Masami

  Ntt Opto-electronics Laboratories

• Mori Hidefumi

  NTT Opto-electronics Laboratories

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