Threading Dislocation Density Reduction in GaAs on Si Substrates : Surfaces, Interfaces and Films

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-12-20

著者

• ITOH Yoshio

  NTT Opto-electronics Laboratories

• Nishioka Takashi

  Ntt Basic Research Laboratories

• SUGO Mitsuru

  NTT Opto-electronics Laboratories

• YAMAMOTO Akio

  NTT Opto-electronics Laboratories

• YAMAGUCHI Masfumi

  NTT Opto-electronics Laboratories

関連論文

• 1.3-μm Surface-Normal Reflective Optical Modulators Based on the Wannier-Stark Effect in InP/InGaAsP Superlattices
• Cold Nuclear Fusion Induced by Controlled Out-Diffusion of Deuterons in Palladium
• Threading Dislocation Density Reduction in GaAs on Si Substrates : Surfaces, Interfaces and Films
• Oxidation of Ultrathin SiGe Layer on Si(001) : Evidence for Inward Movement of Ge
• Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
• 1.5 μm-Long-Wavelength Multiple Quantum Well Laser on a Si Substrate
• Self-Organization Phenomenon in a Strained InGaAs System and Its Application for Quantum Disk Lasers (Special Issue on Quantum Effect Divices and Their Fabrication Technologies)
• Ramen Scattering Study of the Soft Mode in Ferroelectric (CH_3NHCH_2COOH)_3CaCl_2

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