Si LPE Lateral Overgrowth from a Ridge Seed
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概要
- 論文の詳細を見る
A ridge seed is proposed for use in controlling the layer thickness of an epitaxial lateral overgrowth (ELO). An ELO layer was grown from the ridge seed on a Si(111) substrate, and under a certain growth condition, it was found that no growth occurred at all on the seed except on the side wall, which gave the exact same thickness of the ELO layer as that of the seed. By this technique, a 0.23 μm-thick ELO layer was grown from a ridge seed. This result demonstrates that ELO thickness is controllable down to the order of 100 nm by using the present method. The ratio of the lateral growth width to the layer thickness was developed to 82.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Suzuki Yoshiyuki
Department Of Applied Physics Tohoku University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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