Dopant Segregation in Earth- and Space-Grown InP Crystals
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-07-15
著者
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Danilewsky Andreas
Kristallographisches Institut Universitat
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OKAMOTO Yusuke
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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BENZ Klaus
Kristallographisches Institut, Universitat
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Benz Klaus
Kristallographisches Institut Universitat
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Okamoto Y
Univ. Tsukuba Ibaraki Jpn
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Nishinaga Tatau
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Nishinaga T
Department Of Materials Science And Engineering Faculty Of Science And Technology Meijo University
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Okamoto Yusuke
Department Of Electronic Engineering Faculty Of Engineering University Of Tokyo
関連論文
- Dopant Segregation in Earth- and Space-Grown InP Crystals
- InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
- Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Solute Redistribution in Laser Crystallization in Concentrated InAs-GaAs Alloy
- Si Contamination in Epitaxial Boron Monophosphide
- Measurement of Specific Heat of Boron Monophosphide by AC Calorimetry
- Thermal Expansion Coefficient of Boron Monophosphide
- Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
- AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_Sb
- Properties of III-V Based Ferromagnetic Semiconductor (Ga_Mn_x) As : As Pressure Dependence
- Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer
- Suppression of Thermal Damage of InP by Adding Ar in H_2 Atmosphere
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction
- Sheet Resistivity of the Epitaxially Grown Germanium Layer
- Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
- Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates
- LPE Lateral Overgrowth of GaP
- Epitaxial Lateral Overgrowth of GaAs by LPE : Condensed Matter
- The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask
- A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
- PL Property of ZnTe Grown by Chemical Transport and Its Growth Method Dependency
- Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys
- Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
- Theoritical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs : Condensed Matter
- Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
- Plasma Spreading and Turn-On Delay in a Power Thyristor
- Sharp-Flat Reversible Change of Top of Pyramid in GaAs Molecular Beam Epitaxy on (111)B Patterned Substrate : Semiconductors
- Experimental Studies of Impurity Doping in Vapor Growth of Ge
- A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor
- Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
- Doping Effect of Oxygen on Horizontal Bridgman Grown InP
- Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs
- Two-Dimensional Computer Analysis of Liquid Phase Epitaxy
- Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy
- Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
- MBE Growth of GaAs_Sb_x and In_yGa_As and Application of BCF Theory to Study the Alloy Composition : Condensed Matter
- Transport Reaction in Closed Tube Process
- Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process
- Modulation Molecular Beam Epitaxy under Constant Low As Pressure
- Analysis of Disorder Scattering in Ga_In_As Using Gaussian Potential
- Computer Calculations of the Chemical Transport of GaSe in Closed Tubes
- Surface Morphology of LPE Grown InP
- Thermal Etching Effect of InP Substrate in LPE Saturation Process
- New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation
- Si LPE Lateral Overgrowth from a Ridge Seed
- Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence
- Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates