Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates
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概要
- 論文の詳細を見る
The previous theoretical work on MBE of GaAs, which is based on the 2D-nucleation and surface diffusion, has been expanded to take into account the surface diffusion of arsenic as well as that of gallium. MBE experiments were carried out on the GaAs(001) substrates which were misoriented from (001) toward [110], [$\bar{1}10$], or [100]. By measuring the critical temperature at which RHEED intensity oscillation begins to appear, the critical conditions for the mode transition were obtained. With the present theory and the experimental data, the surface diffusion length of gallium is evaluated and the origin of its anisotropic behavior of gallium is discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-07-20
著者
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Nishinaga Tatau
Department of Electronic Engineering, the Faculty of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113
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Shitara Tomoya
Department of Electronic Engineering, the Faculty of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113
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