Sharp-Flat Reversible Change of Top of Pyramid in GaAs Molecular Beam Epitaxy on (111)B Patterned Substrate : Semiconductors
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概要
- 論文の詳細を見る
The sharpening and flattening of the top of a pyramid on GaAs(111)B substrate during molecular beam epitaxy (MBE) of GaAs were monitored in real time under a microprobe reflection high-energy electron diffraction/scanning electron microscope (microprobe-RHEED/SEM) installed in a MBE chamber. After the formation of sharp pyramids with {110} side facets, the top of the pyramids was flattened and sharpened reversibly by increasing and decreasing arsenic pressure, respectively. To understand this behavior, we conducted a theoretical analysis based on intersurface diffusion, and we found a good agreement between the calculated and experimental results. Using this knowledge, we succeeded in controlling the size of the top of pyramids in real time.
- 社団法人応用物理学会の論文
- 2002-04-01
著者
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Nishinaga Tatau
Department Of Electronic Engineering The Graduate School Of Engineering The University Of Tokyo:(pre
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Ogura Takayuki
Department Of Electronic Engineering The Graduate School Of Engineering The University Of Tokyo
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Takada Kan
Department Of Electronic Engineering The Graduate School Of Engineering The University Of Tokyo
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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