A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor
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概要
- 論文の詳細を見る
An improved continuous method of the epitaxial growth of silicon is employed for SiCl_4-H_2 system. In this system the epitaxial growth is carried out just after in-situ etching by passing a line of wafers through the furnace which has one each of high and low temperature regions. The profiles of epitaxial layer thickness and carrier concentration in a single wafer were obtained and the average of these values for each wafer in a single run is calculated and listed in the tables. These results show a high degree of uniformity.
- 社団法人応用物理学会の論文
- 1974-04-05
著者
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Ogawa Hiroshi
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Ogawa Hiroshi
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address)department Of El
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NISHINAGA Tatau
Department of Electronics, Faculty of Engineering, Nagoya University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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