Sheet Resistivity of the Epitaxially Grown Germanium Layer
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概要
- 論文の詳細を見る
The vapor deposited layer of germanium usually contains a considerable number of lattice imperfections lowering its resistivity. The distribution of the defect concentrations is not uniform over the grown layer; it is maximum at the interface between the substrate and the grown layer and it decreases as leaving the interface, to disappear almost perfectly at a distance 10∼20 μ from the interface. Such a non-uniform distribution is essentially the same, whether the layer will be produced through the open tube or the closed tube or the closed tube process, and whether they will be vapor-etched in situ or not. The results suggest that the mechanism producing producing the imperfection centers is determined by the surface condition of the substrate or the existence of non-equilibrium adsorption state.
- 社団法人応用物理学会の論文
- 1968-05-05
著者
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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KAKEHI Masahiro
Department of Applied Biological Chemistry, The University of Tokyo
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Kakehi Masahiro
Department Of Electronics Faculty Of Engineering Nagoya University
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Kakehi Masahiro
Department Of Applied Biological Chemistry The University Of Tokyo
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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KAKEHI Masahiro
Department of Electronics, Faculty of Engineering Nagoya University
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ARIZUMI Tetsuya
Department of Electronics, Faculty of Engineering Nagoya University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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