New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation
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概要
- 論文の詳細を見る
A new technique for decreasing oxygen concentration in the AlGaAs layer during molecular beam epitaxy (MBE) is proposed on the basis of oxygen incorporation. In this technique, the growth temperature is successively decreased at each interface where the AlAs mole fraction is changed. The secondary ion mass spectroscopy (SIMS) analysis indicates that both oxygen concentration near the active layer and the oxygen peaks at each interface, which are commonly observed using the layer grown by a conventional method, are effectively suppressed by the new technique. The laser diode fabricated from the wafer shows characteristics superior to those of the lasers fabricated by a conventional method. For example, the threshold current density is as low as 1.1 kA/cm2.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Naritsuka Shigeya
Department Of Electrical Engineering Faculty Of Engineering The University Of Tokyo
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Kobayashi Osamu
Department Of Aeronautics And Astronautics
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Naritsuka Shigeya
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan
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Mitsuda Kazuhiro
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan
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Kobayashi Osamu
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan
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Nishinaga Tatau
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogama-guchi, Tenpaku-ku, Nagoya 468-8502, Japan
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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