Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence
スポンサーリンク
概要
- 論文の詳細を見る
Nitrogen inhomogeneity in LPE GaP is studied by spatially resolved photoluminescence. It is found that the nitrogen is doped much less under the macrostep riser which is composed of high-density atomic steps. The origin of this nonuniformity is discussed and it is concluded that the equilibrium concentration of nitrogen along a step is frozen in the bulk crystal, and hence the bulk concentration shows the step velocity dependence.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-05-20
著者
-
Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
-
Pak Kangsa
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
-
Sasaoka Chiaki
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo, Tokyo 103
-
Nishinaga Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo, Tokyo 103
-
Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
関連論文
- Dopant Segregation in Earth- and Space-Grown InP Crystals
- InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
- Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Si Contamination in Epitaxial Boron Monophosphide
- Measurement of Specific Heat of Boron Monophosphide by AC Calorimetry
- Thermal Expansion Coefficient of Boron Monophosphide
- Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
- AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_Sb
- Suppression of Thermal Damage of InP by Adding Ar in H_2 Atmosphere
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction
- Sheet Resistivity of the Epitaxially Grown Germanium Layer
- Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
- Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates
- LPE Lateral Overgrowth of GaP
- Epitaxial Lateral Overgrowth of GaAs by LPE : Condensed Matter
- The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask
- A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
- PL Property of ZnTe Grown by Chemical Transport and Its Growth Method Dependency
- Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys
- Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
- Theoritical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs : Condensed Matter
- Vapor Etching of Boron Monophosphide by Gaseous Hydrogen Chloride
- Plasma Spreading and Turn-On Delay in a Power Thyristor
- Sharp-Flat Reversible Change of Top of Pyramid in GaAs Molecular Beam Epitaxy on (111)B Patterned Substrate : Semiconductors
- Experimental Studies of Impurity Doping in Vapor Growth of Ge
- A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor
- Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
- Doping Effect of Oxygen on Horizontal Bridgman Grown InP
- Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs
- Two-Dimensional Computer Analysis of Liquid Phase Epitaxy
- Surface Diffusion of Al Atoms on GaAs Vicinal Surfaces in Molecular Beam Epitaxy
- Effect of Growth Parameters on the Epitaxial Growth of BP on Si Substrate
- MBE Growth of GaAs_Sb_x and In_yGa_As and Application of BCF Theory to Study the Alloy Composition : Condensed Matter
- Transport Reaction in Closed Tube Process
- Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process
- Modulation Molecular Beam Epitaxy under Constant Low As Pressure
- Computer Calculations of the Chemical Transport of GaSe in Closed Tubes
- Surface Morphology of LPE Grown InP
- Thermal Etching Effect of InP Substrate in LPE Saturation Process
- New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation
- Si LPE Lateral Overgrowth from a Ridge Seed
- Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence
- Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates
- Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence