Suppression of Thermal Damage of InP by Adding Ar in H_2 Atmosphere
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-09-05
著者
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Nishinaga Tatau
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Pak Kangsa
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
関連論文
- Dopant Segregation in Earth- and Space-Grown InP Crystals
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Solute Redistribution in Laser Crystallization in Concentrated InAs-GaAs Alloy
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
- Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer
- Suppression of Thermal Damage of InP by Adding Ar in H_2 Atmosphere
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
- Doping Effect of Oxygen on Horizontal Bridgman Grown InP
- Two-Dimensional Computer Analysis of Liquid Phase Epitaxy
- Analysis of Disorder Scattering in Ga_In_As Using Gaussian Potential
- Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence