Two-Dimensional Computer Analysis of Liquid Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
Two-dimensional computer analysis of LPE is performed to find the mechanism of edge growth. The edge height and nonuniformity factor are calculated as a function of time for various growth parameters. The calculations are compared with experiment and good agreement is found between them. Three methods are recommended for minimizing edge growth. The first is to employ higher super-saturation and short growth time. The second is to set the area of the substrate as close as possible to that of the solution bottom. To realize the latter, it is necessary to use a substrate wider than the solution bottom, and we suggest putting a weight on the solution to obviate the nonwetting region on the substrate in the corner of the slide boat well. The third is to choose a special shape of the solution well. It is concluded that edge growth is due to diffusion from the solution on the nongrowth region adjacent to the growth edge.
- 社団法人応用物理学会の論文
- 1979-09-05
著者
-
Nishinaga Tatau
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
-
Pak Kangsa
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
-
NAKAMURA Tetsuroh
School of Electrical Engineering and Electronics, Toyohashi University of Technology
-
Nakamura Tetsuroh
School Of Electrical Engineering And Electronics Toyohashi University Of Technology
関連論文
- Dopant Segregation in Earth- and Space-Grown InP Crystals
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Solute Redistribution in Laser Crystallization in Concentrated InAs-GaAs Alloy
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
- Epitaxial Growth of SOS Films with Amorphous Si Buffer Layer
- Suppression of Thermal Damage of InP by Adding Ar in H_2 Atmosphere
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
- Doping Effect of Oxygen on Horizontal Bridgman Grown InP
- Two-Dimensional Computer Analysis of Liquid Phase Epitaxy
- Analysis of Disorder Scattering in Ga_In_As Using Gaussian Potential
- Study of Nitrogen Inhomogeneity in LPE GaP by Spatially Resolved Photoluminescence