Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs
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概要
- 論文の詳細を見る
By using a single quantum well structure, the dependence of the Ga desorption rate upon the step density in the growth of GaAs by molecular beam epitaxy is studied. It is shown that the desorption rate has no dependence in the entire range of the growth temperature within the sensitivity of the experiments. By comparing the present theory with the experimental results, the upper limit of supersaturation possibly existing at the growth step is estimated and it is concluded that near equilibrium is established at the step edge at relatively high growth temperature where the evaporation of Ga occurs.
- 社団法人応用物理学会の論文
- 1991-09-15
著者
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Suzuki Takashi
Department Of Biochemistry University Of Shizuoka School Of Pharmaceutical Sciences:core Research Fo
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ICHIMURA Ikuhisa
Department of Electronic Engineering, Faculty of Engineering, The University of Tokyo
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Ichimura Ikuhisa
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Suzuki Takashi
Department Of Anatomic Pathology Tohoku University School Of Medicine
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