LPE Lateral Overgrowth of GaP
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概要
- 論文の詳細を見る
Epitaxial lateral overgrowth (ELO) of GaP on SiO_2-coated (111)B or (111)A GaP substrates was carried out successfully by LPE. It was found that the ELO of GaP showed dependency on seed orientation similar to that of GaAs. However, a pronounced asymmetry of lateral growth in [2^^-11] and [21^^-1^^-] orientations was found. Monomolecular growth steps on the ELO layer have been observed by a Nomarski differential interference contrast microscope equipped with an image processor without decoration. Nitrogen doping was performed, and its nonuniform distribution was investigated by a fluorescence microscope and spatially resolved photoluminescence. From the nonuniformity, an understanding of the ELO mechanism was derived. It was found that the epilayer had a much lower dislocation density than that in a substrate. It was concluded that wide and extremely flat GaP epilayers with high quality can be obtained by the ELO technique.
- 社団法人応用物理学会の論文
- 1990-03-20
著者
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, University of Tokyo
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Nishinaga Tatau
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Zhang S
Structure Research Laboratory University Of Science And Technology Of China
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ZHANG Shujun
Material Research Institute, Pennsylvania State University
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Zhang Suian
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Zhang Shuyuan
Structure Research Laboratory University Of Science And Technology Of China
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NISHINAGA Tatau
Department of Electronic Engineering, Faculty of Engineering, The University of Tokyo
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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