Epitaxial Lateral Overgrowth of GaAs by LPE : Condensed Matter
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概要
- 論文の詳細を見る
Epitaxial lateral overgrowth (ELO) of GaAs on SiO_2 film was successfully performed by LPE. It was found that the lateral overgrowth on (111)B substrate was the slowest when the stripe opening in SiO_2 film oriented in the <1^^-l0> and equivalent directions, while it was the fastest when the stripe oriented in the <112^^-> and equivalent directions. In the latter case, a large lateral to vertical growth velocity ratio (up to 50) of epitaxial GaAs was achieved. RC etching revealed that the etch pit density in the lateral epitaxial GaAs was found to be extremely low.
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Nishinaga Tatau
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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Nishinaga Tatau
Department Of Clectronic Engineering The Faculty Of Engineering The University Of Tokyo
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Zhang Suian
Department Of Electronic Engineering Faculty Of Engineering The University Of Tokyo
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NAKANO Tsuyoshi
Department of Electronic Engineering, Faculty of Engineering, The University of Tokyo
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Nakano Tsuyoshi
Department Of Biology Ochanomizu University
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Nishinaga Tatau
Departlnent of Materials Science and Engineering, Faculty of Science and Technology, Meijo University
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