High Reverse Currents of GaSb and GaAs Tunnel Diodes
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概要
- 論文の詳細を見る
Reverse currents of GaSb and GaAs tunnel diodes are investigated at temperatures between 4.2 and 290°K up to several hundred times their peak currents. Applying Kane's tunneling theory, the slope of the log J vs. log V curve should be nearly equal to 1.0 in low bias range, while it increases with the applied voltage in the middle bias region, depending on the impurity concentration, band gap width, effective mass and others. The experimental results show that the relative magnitude of the current is explained by the theory to a extent over fourth order if the series resistance is correctly taken into account. In very high bias region, the theoretical consideration suggests that the slope of the curve tends to 1.5 in every kinds of tunnel diodes.
- 社団法人応用物理学会の論文
- 1969-02-05
著者
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YOSHIDA AKIRA
Department of Radiological Sciences, Hiroshima Prefectural College of Health Science
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SUZUKI Hideaki
Department of Surgery, Nagai General Hospital
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Arizumi Tetsuya
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Suzuki Hideaki
Department Of Neuropsychiatry Nippon Medical School
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Yoshida Akira
Department Of Cardiology Kyoto National Hospital
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Suzuki Hideaki
Department Of Electronics Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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Suzuki Hideaki
Department Of Cardiovascular Medicine Tohoku University Graduate School Of Medicine
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