Two Different Modes Acoustoelectric Oscillation and Microwave Emission from n-InSb
スポンサーリンク
概要
- 論文の詳細を見る
Two modes of microwave emission from a bar of n-InSb of [110] orientation were observed at 77°K in crossed electric and magnetic fields and were found to trace the threshold curve for the two modes of acoustoelectric current oscillation. These two modes of the microwave emission are closely related to the two modes of the acoustoelectric oscillation. The first mode was observed at a magnetic field less than 2 kG and its minimum threshold electric field for the microwave emission was about 20 V/cm at 400 G. The second mode was observed at fields higher than 2 kG and its minimum threshold electric field for the microwave emission was about 5.5 V/cm at 5 kG. For the first mode the frequency spectrum of the microwave emission was distributed mainly between 3 GHz and 5 GHz, and for the second mode between 20 MHz and 300 MHz. The angular dependence of the transverse magnetic field was different for these two modes. It is shown from these results and the difference between the I-V characteristics that the two modes of the acoustoelectric oscillation and accompanied microwave emission are classified to two regimes, ql<1 and ql>1.
- 社団法人日本物理学会の論文
- 1968-12-05
著者
-
Aoki Takeshi
Department Of Electronics Faculty Of Engineering Nagoya University
-
Arizumi Tetsuya
Department Of Electronics Faculty Of Engineering Nagoya University
-
Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
-
HAYAKAWA Kiyonori
Department of Electronics, Faculty of Engineering, Nagoya University
-
Aoki Takeshi
Department Of Drug Safety Res. Eisai Co. Ltd.
-
Hayakawa Kiyonori
Department Of Electronics Faculty Of Engineering Nagoya University:(present Address) Sony Corporatio
関連論文
- Microviscosity Dependence of Magnetic Isotope Effect on Radical Pair Decay Rates in SDS Micellar Solution
- High Magnetic Field Effects on the Lifetimes of Radical Pairs Generated by the Photoreduction of Anthraquinone and n-Alkyl Anthraquinone-2-carboxylates in Micellar Solutions
- Postmortem computed tomography for detecting causes of sudden death in infants and children : retrospective review of cases
- Influence of Micelles and Magnetic Isotopes on Magnetic Field Dependence of Lifetimes of Benzophenone Ketyl-Allkyl Radical Pairs
- Intracerebellar Penetrating Injury and Abscess Due to a Wooden Foreign Body
- ESR Centers in Silicon Monoxide
- Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
- Theory of Tunneling into Impurity Band
- Kinetic Inductance of Superconducting Coplanar Waveguides
- Electron Microscope Investigation of Structures of Amorphous Germanium Films
- Electron Microscope Investigation of Structural Changes in Amorphous GeSe_2 Films
- Microwave Conductivity and Relaxation of Excess Phonons in CdS
- Mechanism of Off-Axis Domain Formation and Current Anomaly in Semiconducting CdS
- Light Emission Associated with High Field Domains in Semiconducting CdS
- Correction to "Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS"
- Reflection from Anode Side and Decay of High Field Domain in Semiconducting CdS
- A pediatric case of critical illness polyneuropathy : clinical and pathological findings
- Effect of Magnetic Field on Density Distribution of Injected Plasma in Semiconductor Rods
- Density Distributions of Injected Plasma along the Length of Semiconductor Rods
- Epitaxial Vapor Growth of Gallium Antimonide
- Sheet Resistivity of the Epitaxially Grown Germanium Layer
- Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
- Comparison of IgG, IgG1 and IgG2 immune responses to pneumococcal polysaccharide in atopic and nonatopic children
- An association between asthma and TNF-308G/A polymorphism : meta-analysis
- Electrothermal Effects in Chalcogenide Glass Semiconductors
- ESR Study on Surface Properties of Semiconductor. : II. III-V Compounds (GaAs, GaSb and InSb)
- The Doppler Effects of the Drifting Plasma in Semiconductors
- Intraoperative fluorescent imaging using indocyanine green for liver mapping and cholangiography
- 201 EFFECT OF 17α-ETHINYL ESTRADIOL, RIFAMPICIN AND COLCHICINE ON BILIRUBIN AND LIVER IN HYPERBILIRUBINURIA RAT(EHBR)
- The Selective Epitaxial Growth of Silicon by Using Silicon Nitride Film as a Mask
- A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis
- Preparation and Electrical Properties of GaSb-Ge Heterojunctions by Vapor Growth Technique
- High Reverse Currents of GaSb and GaAs Tunnel Diodes
- Negative Resistance Due to Impact Ionization in Irradiated Germanium
- Decrease of Built-in Voltage in Tunnel Diodes Caused by Irradiation
- Spiral Delay Line of SH_0 Wave Guided on PZT Disk
- Finite Element Method Analysis of a Shear Horizontal Wave Guided in a Piezoelectric Plate
- Guided Shear Horizontal Wave in a PZT Ceramic Plate
- Isolated adrenocorticotropic hormone deficiency presenting with psychomotor retardation
- A Supplement to "Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge"
- Etch Patterns and Dislocation Etch Pits on Germanium with KI-I_2 Redox System
- Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge
- Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
- Incubation Time of Acoustoelectric Domain in n-InSb
- Decay of Acoustoelectric Domain and Microwave Emission in n-InSb
- Two Different Modes Acoustoelectric Oscillation and Microwave Emission from n-InSb
- Microwave Emission from Acoustoelectrically Oscillating n-InSb
- Oscillistors in a Locally Concentrated Magnetic Field
- Oscillation Modes of Oscillistors I : Uniform Magnetic Field.
- Theory of Plasma Spreading Velocity in a Thyristor
- Tunneling Spectroscopic Study of the Impurity Band of (000) Valley of Germanium
- Tunneling through Band Tail States
- Uniaxial Stress Effect on Subsidiary Band Minima of GaSb from Zero Bias Conductance Anomaly
- Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium
- Oscillation Modes of Oscillistors II : Locally Concentrated Magnetic Field
- Etch Patterns in Germanium
- On the Structural Properties of Vapor-Deposited Germanium Layers
- Experimental Studies of Impurity Doping in Vapor Growth of Ge
- A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor
- Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride
- Transport Reaction in Closed Tube Process
- Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process
- Electrical Properties of Chalcogenide Glasses of Te-Se-Ge and Te-Se-Sb Systems
- Thermal Switching in Chalcogenide Glass Semiconductors
- Difference of Thermal Properties between Threshold Type and Memory Type Chalcogenide Glass Semiconductors
- Crystallization Rates of the Chalcogenide Glasses by Heat Treatment
- Dependences of the Resistivity and the Switching on Composition in Chalcogenide Glasses
- Injected Carrier Instability in High Electric Field
- Intervalley Transfer in Uniaxially Strained n-Type Ge
- Electric-Field Dependent Motion of Acoustic Domain in n-InSb
- Uniaxial Stress Effect on p^+-n Si-Ge Alloyed Heterojunction Characteristics
- Transport Mechanism of Alloyed p^+-n Heterojunctions with Relatively Heavy Doping
- Transport Properties of Metal-Silicon Schottky Barriers
- Contact Properties of Metal-Silicon Schottky Barriers
- Au-Cu Alloy and Ag-Cu Alloy-Silicon Schottky Barriers
- The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method
- Frequency Shift of a Tunnel-Diode Microwave Oscillator
- Anomalous Junction Capacitance in Tunnel-Diodes
- Barrier Capacitance and Built-in Voltage of Tunnel Diodes
- Moving High-Field Domain and Current Saturation in Optically Excited n-InSb
- The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski Method
- The Numerical Analyses of the Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. : Part II. Effects of the Crucible Rotation
- Damping Mechanism of Acoustoelectric Oscillation and the Effect of Hole-Injection in n-InSb
- Time Evolution of Frequency Spectrum in CdS with Acousto-Electrically Amplified Phonon Flux
- Frequency-Dependence of Lattice Attenuation in CdS with Acoustic Domain
- Magnetic Scattering in Germanium Tunnel Diode
- Au-Ag Alloy-Silicon Schottky Barriers
- A Method of Broad-Band Matching to SAW-IDT (surface acoustic wave interdigital transducer)
- Novel Impedance-Matching Method for Plasma Processing at Very High Frequency Band
- DC Bias Effects on Growth of a-Ge:H in Coaxial-Type ECR Plasma
- Uniaxial Stress Effect on the (000) Valley of As-Doped Ge