DC Bias Effects on Growth of a-Ge:H in Coaxial-Type ECR Plasma
スポンサーリンク
概要
- 論文の詳細を見る
Deposition conditions for obtaining high-quality a-Ge:H are investigated by means of a coaxial-type ECR plasma CVD reactor in which a substrate is placed along a magnetic field. The application of a negative bias to the substrate is found to be crucial to elimination of the postoxidation of deposited films, densification of the matrix, and improvement of the photoelectronic properties. This paper particularly focuses on the substrate bias effects on the structural and compositional inhomogeneities, film stress, chemical resistance and photoelectronic properties of a-Ge:H. The results are explained in terms of moderate ion bombardment caused by the substrate bias ranging from $-50$ V to $-100$ V.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-05-20
著者
-
Kato Seiichi
Department Of Chemistry The University Of Tokyo
-
Aoki Takeshi
Department Of Drug Safety Res. Eisai Co. Ltd.
-
Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
-
Nishikawa Yasuo
Department of Electronic Engineering, Faculty of Engineering, Tokyo Institute of Polytechnics,
関連論文
- Microviscosity Dependence of Magnetic Isotope Effect on Radical Pair Decay Rates in SDS Micellar Solution
- High Magnetic Field Effects on the Lifetimes of Radical Pairs Generated by the Photoreduction of Anthraquinone and n-Alkyl Anthraquinone-2-carboxylates in Micellar Solutions
- Substitutional Doping of a-Si_xN_ : H : III-1: AMORPHOUS FILMS
- Wide Optical-Gap, Photoconductive a-Si_xN_: H
- Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
- A New Technique of Boron Doping in Si:H Films
- Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
- Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
- Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
- Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
- Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
- Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
- Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
- Luminescence from Thermally Oxidized Porous Silicon
- Effect of Substrate Bias on Silicon Thin-Film Growth in Plasma-Enhanced Chemical Vapor Deposition at Cryogenic Temperatures
- Postmortem computed tomography for detecting causes of sudden death in infants and children : retrospective review of cases
- Helicobacter heilmannii infection in a child after successful eradication of Helicobacter pylori : case report and review of literature
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- Amorphous Silicon Static Induction Transistor
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
- Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
- Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
- Gastric epithelial cell turnover and mucosal protection in Japanese children with Helicobacter pylori infection
- Comparison between the ^C-urea breath test and stool antigen test for the diagnosis of childhood Helicobacter pylori infection
- Results of triple eradication therapy in Japanese children : a retrospective multicenter study
- Helicobacter pylori and TT virus prevalence in Japanese children
- Influence of Micelles and Magnetic Isotopes on Magnetic Field Dependence of Lifetimes of Benzophenone Ketyl-Allkyl Radical Pairs
- Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
- Intracerebellar Penetrating Injury and Abscess Due to a Wooden Foreign Body
- Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
- Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
- Atomic Layer Controlled Digital Etching of Silicon
- Amorphous Silicon Superlattice Thin Film Transistors
- High-Fluidity Deposition of Silicon by Plasma-Enhanced Chermical Vapor Deposition Using Si_2H_6 or SiH_4
- Kinetic Inductance of Superconducting Coplanar Waveguides
- Survey of methicillin-resistant Staphylococcus aureus from neonates and the environment in the NICU
- Phosphorous Incorporation in Ultrathin Gate Oxides and Its Impact to the Network Structure
- In vitro exposure to macrolide antibiotics in Helicobacter pylori strains isolated from children
- Defect States and Electronic Properties of Post-Hydrogenated CVD Amorphous Silicon
- A ^C-urea breath test in children with Helicobacter pylori infection : assessment of eradication therapy and follow-up after treatment
- A pediatric case of critical illness polyneuropathy : clinical and pathological findings
- Comparison of IgG, IgG1 and IgG2 immune responses to pneumococcal polysaccharide in atopic and nonatopic children
- An association between asthma and TNF-308G/A polymorphism : meta-analysis
- Intraoperative fluorescent imaging using indocyanine green for liver mapping and cholangiography
- 201 EFFECT OF 17α-ETHINYL ESTRADIOL, RIFAMPICIN AND COLCHICINE ON BILIRUBIN AND LIVER IN HYPERBILIRUBINURIA RAT(EHBR)
- Synthesis of Pentamethyl-monohydro[60]fullerene C_Me_5H and Its Use as Cyclopentadienyl-Type Ligand Precursor
- Spiral Delay Line of SH_0 Wave Guided on PZT Disk
- Finite Element Method Analysis of a Shear Horizontal Wave Guided in a Piezoelectric Plate
- Guided Shear Horizontal Wave in a PZT Ceramic Plate
- Isolated adrenocorticotropic hormone deficiency presenting with psychomotor retardation
- Incubation Time of Acoustoelectric Domain in n-InSb
- Decay of Acoustoelectric Domain and Microwave Emission in n-InSb
- Two Different Modes Acoustoelectric Oscillation and Microwave Emission from n-InSb
- Microwave Emission from Acoustoelectrically Oscillating n-InSb
- Electric-Field Dependent Motion of Acoustic Domain in n-InSb
- Moving High-Field Domain and Current Saturation in Optically Excited n-InSb
- A Method of Broad-Band Matching to SAW-IDT (surface acoustic wave interdigital transducer)
- Remarkable similarity in genome nucleotide sequences between the Schwarz FF-8 and AIK-C measles virus vaccine strains and apparent nucleotide differences in the phosphoprotein gene
- Novel Impedance-Matching Method for Plasma Processing at Very High Frequency Band
- Elastic Properties of New Pressure-Transmitting Medium Daphne 7474 under High Pressure
- DC Bias Effects on Growth of a-Ge:H in Coaxial-Type ECR Plasma
- The prevalence of Helicobacter pylori in Japanese children with gastritis or peptic ulcer disease