Chemical Stability of HF-Treated Si(111) Surfaces

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1991-12-30

著者

• HIROSE Masataka

  Department of Electrical Engineering, Hiroshima University

• Miyazaki S

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Miyazaki Seiichi

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Dept. Of Electrical Engineering Hiroshima University

• YASAKA Tatsuhiro

  Department of Electrical Engineering, Hiroshima University

• SAWARA Kenichi

  Research Center for Integrated Systems, Hiroshima University

• KANDA Kozo

  Department of Electrical Engineering, Hiroshima University

• Miyazaki Seiichi

  Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive

• Kanda K

  Univ. Tokyo Tokyo Jpn

• Sawara Kenichi

  Research Center For Integrated Systems Hiroshima University:(present Address) Sumitomo Chemical Co.

• Hirose Masataka

  Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol

• Hirose M

  Materials Research Center Tdk Corporation

• Kanda Kozo

  Department Of Electrical Engineering Hiroshima University

• Hirose Masataka

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• Hirose Masataka

  Department Of Electrical Engineering Faculty Of Engineering Hiroshima University

• Yasaka Tatsuhiro

  Department Of Electrical Engineering Hiroshima University

• Miyazaki Seiichi

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

関連論文

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• Wide Optical-Gap, Photoconductive a-Si_xN_: H
• Nucleation of Microcrystallites in Phosphorus-Doped Si: H Films
• A New Technique of Boron Doping in Si:H Films
• Effect of Annealing on Hydrogenated Amorphous Silicon Prepared at High Deposition Rate
• Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
• Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
• Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
• Electronic Structure of Photochemically Etched Silicon Surfaces : Surfaces, Interfaces and Films
• Diffusion of constituent Atoms in P-type a-Si:H / SnO_2 Interfaces : Surfaces, Interfaces and Films
• Band Offset in Boron-Doped Amorphous Silicon Heterostructures : Electrical Properties of Condensed Matter
• Determination of Band Discontinuity in Amorphous Silicon Heterojunctions : Electrical Properties of Condensed Matter
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
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• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
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• Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
• Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
• Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
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• BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
• Chemical Stability of HF-Treated Si(111) Surfaces
• The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
• Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si
• In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
• Modeling of Soft Breakdown in Ultrathin Gate Oxides
• Determination of Bandgap and Energy Band Alignment for High-Dielectric-Constant Gate Insulators Using High-Resolution X-ray Photoelectron Spectroscopy
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
• Phonon Interaction in the Luminescence of Porous Silicon
• Reabsorption of Visible Luminescence in Porous Si
• Visible Photoluminescence from Porous Silicon
• Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
• Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
• In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
• Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
• Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
• Optically Interconnected Kohonen Net for Pattern Recognition
• High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
• Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
• Real-Timte Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
• Fine SiO_2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
• Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Determination of Valence Band Alignment at Ultrathin SiO_2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy
• Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
• Valence Band Alignment at Ultra-Thin SiO_2/Si(111) Interfaces as Determined by High-Resolution X-Ray Photoelectron Spectroscopy
• Annealing Effects of Paramagnetic Defects Introduced near Silicon Surface
• Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
• Atomic Layer Controlled Digital Etching of Silicon
• Amorphous Silicon Superlattice Thin Film Transistors
• Thickness-Shear Vibration Mode Characteristics of SrBi_4Ti_4O_-Based Ceramics
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• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
• Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
• Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
• Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
• Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
• Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
• Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
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• Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
• Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
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• Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
• Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots

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