Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering
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概要
- 論文の詳細を見る
Implantation of 50 keV Sb^+ ions has been accomplished into silicon through 10 nm thermal oxides with doses ranging from 1×10^<14> cm^<-2> to 1×10^<15> cm^<-2>. The Sb precipitation process at different annealing temperatures has been evaluated by medium-energy ion scattering (MEIS) and Raman scattering. Annealing at 900℃ for 30 min causes Sb precipitation in the bulk Si at concentrations above 〜2×10^<20> cm^<-3>, while at the SiO_2/Si interface the precipitation occurs above 5×^<19> cm^<-3>. The bulk precipitation limit is about one order of magnitude larger than that of the thermal equilibrium solid solubility of Sb (3×^<19> cm^<-3>), while the precipitation at the Si surface or the SiO_2/Si interface occurs at concentrations over the thermal equilibrium value.
- 社団法人応用物理学会の論文
- 1994-12-15
著者
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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HASHIMOTO Makoto
Department of Dermatology, Asahikawa Medical College
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Deguchi Tadayoshi
Department Of Electrical Engineering Hiroshima University
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Hashimoto Makoto
Department Of Dermatology Asahikawa Medical College
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Hirose Masataka
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Hashimoto Makoto
Department Of Agricultural And Life Science Obihiro University Of Agriculture And Veterinary Medicin
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Hashimoto Makoto
Department Of Electrical Engineering Hiroshima University:new Japan Radio Co. Ltd.
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