Hydrogen Plasma Durability of Chemically Treated SnO_2 Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
The chemical stability of SiO_2 surfaces against hydrogen plasma exposure has been studied by treating a SiO_2/glass system either in steam at a substrate temperature of 200 and 400℃ or in ethyl alcohol at 200 and 400℃, or by fluorinating the surface at 400℃ in an NF_3+O_2 gas mixture. Also, an electroplated Zn layer on SiO_2 has been oxidized at 400℃. X-ray photoelectron spectroscopy of such surfaces has revealed that the reduction reaction of the SiO_2 surface exposed to hydrogen plasma is dramatically suppressed by the steam treatment at 400℃.
- 社団法人応用物理学会の論文
- 1993-10-01
著者
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Tanaka Takeshi
Department Of Cardiology The Heart Institute Of Japan
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KAWABATA Keishi
Department of Electronics, Hiroshima Institute of technology
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Kawabata Keishi
Department Of Electronics Engineering Hiroshima Institute Of Technology
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Kawabata Keishi
Department Of Electronics Hiroshima Institute Of Technology
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Hirose Masataka
Department Of Electrical Engineering Faculty Of Engineering Hiroshima University
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Tanaka Takeshi
Department Of Biomedical Chemistry Graduate School Of Medicine The University Of Tokyo
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Tanaka Takeshi
Department Of Electronics Hiroshima Institute Of Technology
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