Intervalley Transfer in Uniaxially Strained n-Type Ge
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概要
- 論文の詳細を見る
The increase of differential conductivity is observed in strained n-type Ge at 77°K. Samples are subjected to the [111] stress and the electric field (parallel to the stress), up to the value of 1.1×10^4kg/cm^2 and 9×10^3V/cm, respectively. Above 5×10^3kg/cm^2, differential conductivity clearly increases at about several thousand volts per cm. The phenomenon is due to the field induced electron transfer between strain split <111> valleys: the effective mass in the direction of current of the lower valley is seventeen times as large as that of the three higher valleys. The current density vs. electric field characteristics agree with the calculations based on a simple model. Electron temperature and valley population ratio are estimated from the experimental results.
- 社団法人応用物理学会の論文
- 1970-11-05
著者
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YOSHIDA AKIRA
Department of Radiological Sciences, Hiroshima Prefectural College of Health Science
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ADACHI Yoshio
Department of Applied Electronics, University of Electro-Communications
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Adachi Yoshio
Department Of Electronics Faculty Of Engineering Nagoya University
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Yoshida Akira
Department Of Agricultural Chemistry Nagoya University
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