Deep Levels in Argon-Implanted and Annealed Indium Phosphide

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概要

• 論文の詳細を見る

• Deep levels in InP caused by Ar-ion implantation and their annealing behaviours by rapid halogen lamp (RHL) annealing in the temperature range from 740 to 935℃ were invesitigated using deep level transient spectroscopy (DLTS) and photoluminescence (PL). The DLTS measurements showed that the RHL annealing, alone, induced electron trap levels E2(0.52 eV) at low temperatures and E1(0.65 eV) at high temperatures. The Ar-ion implantation increased the E2 trap density by two orders of magnitude and caused new traps: E3(0.37 eV), E4(0.25 eV), E5(0.19 eV) and E6(0.17 eV). Subsequent RHL annealing decreased the E3-E6 traps below the detection limit (above 880℃) and E2 to the same level as that of unimplanted/annealed InP at 920℃. Results of the PL measurements are also presented and discussed in relation to the DLTS measurements.

• 社団法人応用物理学会の論文
• 1987-04-20

著者

• Kimura T

  Photonics Research Institute National Institute Of Advanced Industrial Science And Technology

• Kimura Tadamasa

  Department of Electronics Engineering, University of Electro-Communications

• Kimura Tadamasa

  Department Of Applied Electronics The University Of Electro-communications

• Yugo Shigemi

  Department of Electronics, Faculty of Electro-comunications, The University of Electro-Communication

• YUGO Shigemi

  University of Electro-Communications

• Yugo S

  Univ. Electro‐communications Tokyo

• Yugo Shigemi

  Department Of Applied Electronics The University Of Electro-communications

• LUO Ji-Kui

  Department of Applied Electronics, University of Electro-Communications

• ADACHI Yoshio

  Department of Applied Electronics, University of Electro-Communications

• Luo Ji-kui

  Department Of Applied Electronics University Of Electro-communications:(present Address) Hokkaido Un

• Adachi Y

  Yokohama National Univ. Yokohama Jpn

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