Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures : Electrical Properties of Condensed Matter
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概要
- 論文の詳細を見る
In order to clarify the low field transport properties of two-dimensional electron gas (2DEG) in selectively doped (SD) AlGaAs/GaInAs/GaAs pseudomorphic structures, electron effective mass as well as electron scattering mechanisms were investigated using molecular beam epitaxially grown SD-Al_<0.3>Ga_<0.7>As/Ga_<0.87>In_<0.13>As/GaAs structures. Temperature dependence of Shubnikov-de Haas oscillation showed that the effective mass of 2DEG was greater than that of a bulk alloy. Enhancement of the effective mass quantitatively agrees with that expected from the effect of strain and nonparabolicity. The 2DEG mobilities were measured by Hall measurements as a function of carrier concentration, n_s, as well as a function of temperature. At a low temperature range (<40 K), mobility increased with increasing n_s and saturated at a high n_s region where virtually no temperature dependence was observed. Comparison of the mobility with that of AlGaAs/GaAs heterostructures and the results of the scattering theory revealed that the mobility at low temperatures can be quantitatively explained by the cluster scattering due to compositional nonuniformity in addition to the remote ionized impurity scattering.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
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Ohno Hideo
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Moroishi K
Hoya Corp. Tokyo Jpn
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Luo J‐k
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Luo Ji-kui
Department Of Applied Electronics University Of Electro-communications:(present Address) Hokkaido Un
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Matsuzaki K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
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MATSUZAKI Kinichiro
Department of Electrical Engineering, Faculty of Engineering, Hokkaido University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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