A Common Energy Reference for DX Centers and EL2 Levels in III-V Compound Semiconductors
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概要
- 論文の詳細を見る
The lack of energy reference level for deep levels, which has been one of the major difficulties in previous deep level research, is overcome by Hasegawa-Ohno's hybrid orbital energy level, E_<HO> recently found for insulator-semiconductor and metal-semiconductor interfaces. E_<HO> is shown to serve as the energy reference for DX centers and EL2 donors in the major III-V compound semiconductors and their alloys. Based on the novel alignment of DX centers with respect to E_<HO> a proposal is made that the DX center is related to the anti-bonding state formed by the substitutional donor impurity atom itself.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Ohno Hideo
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Ohno Hideo
Department Of Chemistry Faculty Of Science Kyoto University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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