Characterization of Deep Levels in Si-Doped In_xAl_<1-x>As Layers Growrn by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Deep levels in Si-doped In_xAl_<1-x>As layers grown by molecular beam epitaxy were systematically investigated, changing the alloy composition for the first time. Deep level traps were characterized by deep level transient spec-troscopy (DLTS) measurements and photoluminescence (PL) measurements. Two kinds of deep electron traps, E_1 and E_2 were observed. Least squares fitting curves of all data on the E_1 and E_2 traps were almost parallel to the Γ-band edge. From the observed dependence of trap level position on the alloy composition as well as from the comparison between DLTS and PL results, observed traps seem to be not DX center like donors but normal deep donors associated with the Γ-band.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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TOMOZAWA Hidemasa
Eniwa Research and Development Center, Kyoto Semiconductor Corporation
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Hashizume Tamotsu
Department of Electrical Engineering, Hokkaido University
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Tomozawa Hidemasa
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Tomozawa Hidemasa
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Tomozawa Hidemasa
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Malinin Alexei
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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Malinin Alexei
Department Of Electrical Engineering And Research Center For Interface Quantum Electronics Hokkaido
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Hashizume Tamotsu
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:(permanent Address)k
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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