TOMOZAWA Hidemasa | Eniwa Research and Development Center, Kyoto Semiconductor Corporation
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概要
- TOMOZAWA Hidemasaの詳細を見る
- 同名の論文著者
- Eniwa Research and Development Center, Kyoto Semiconductor Corporationの論文著者
関連著者
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TOMOZAWA Hidemasa
Eniwa Research and Development Center, Kyoto Semiconductor Corporation
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Tomozawa Hidemasa
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Tomozawa Hidemasa
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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JINUSHI Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Jinushi Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Taniguchi Kazuo
Department of Pediatrics, Nihon University School of Medicine
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Nishida Katsuhiko
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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OKADA HIROSHI
Botanical Gardens, Faculty of Science, Osaka City University
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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AKATANI Kenji
Department of Electronics, Osaka Electro-Communication University
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UEDA Michihisa
Department of Electronics, Osaka Electro-Communication University
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SEGAWA Kazushige
Department of Electronics, Osaka Electro-Communication University
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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Akatani Kenji
Department Of Electronics Osaka Electro-communication University
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Ueda Michihisa
Department Of Electronics Osaka Electro-communication University
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Hashizume Tamotsu
Department of Electrical Engineering, Hokkaido University
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Segawa Kazushige
Department Of Electronics Osaka Electro-communication University
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Tomozawa Hidemasa
Department Of Electrical Engineering Faculty Of Engineering And Research Center For Interface Quantu
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Taniguchi Kazuo
Department Of Materials Science Osaka Electro-communication University
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Taniguchi Kazuo
Department Of A Nesthesiology Oita Medical University
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Nishida K
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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Okada H
Botanical Gardens Faculty Of Science Osaka City University
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Malinin Alexei
Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Malinin Alexei
Department Of Electrical Engineering And Research Center For Interface Quantum Electronics Hokkaido
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Hashizume Tamotsu
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:(permanent Address)k
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Hasegawa Hideki
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Ueda Michihisa
Department of Chemistry, Faculty of Science, Osaka City University
著作論文
- A New N-Channel Junction Field-Effect Transistor Embedded in the i Layer of a Pin Diode
- Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
- Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
- Characterization of Deep Levels in Si-Doped In_xAl_As Layers Growrn by Molecular Beam Epitaxy