Okada H | Botanical Gardens Faculty Of Science Osaka City University

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概要

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著作論文

Molecular Cloning and Sequencing of the Phenol Hydroxylase Gene from Pseudomonas putida BH
Taxonomic Notes on Cayratia tenuifolia (Wight & Arn.) Gagnep., Vitaceae
Intra-specific Polyploidy and Possible Occurrence of Some Genetic Types for Pollen Development in Cayratia japonica, Vitaceae.
Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors
Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
Noncontact Measurement of Sodium Ions in Silicon Oxide
Noncontact Measurement of Doping Profile for Bare Silicon
Improvement of Sensor for Noncontact Capacitance/Voltage Measurement and Lifetime Measurement of Bare Silicon(100)
Noncontact Measurement of Generation Lifetime
Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K
Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
Novel Approach to Evaluation of Charging on Semiconductor Surface by Noncontact, Electrode-Free Capacitance/Voltage Measurement
Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
Observation of Coulomb Blockade Oscillations up to 50K from InP-Based InGaAs Quantum Wires Grown by Molecular Beam Epitaxy
Transport Characterization of Schottky In-Plane Gate Al_Ga_As/GaAs Quantum Wire Transistors Realized by In-Situ Electrochemical Process

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