Kasai Seiya | Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan

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著作論文

Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
Process Charactarization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
Fabrication and Characterization of InGaAs/InAlAs Insulated Gate Pseudomorphic HENTs Having a Silicon Interface Control Layer
Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application
Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors
Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG
Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs
Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer
Compact Reconfigurable Binary-Decision-Diagram Logic Circuit on a GaAs Nanowire Network
Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
Investigation of Side-gating Effects in GaAs-based Quantum Wire Transistor (QWRTr) utilizing Nanosized Schottky Gates
Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures
Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires
Reactive Ion Beam Etching of GaN and AlGaN for Nano-structure Fabrication Using Methane-Based Gas Mixtures
A Novel GaAs Binary Decision Diagram Device Having Quantum Wire Branch-Switches Controlled by Wrap Gates
Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions
A Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal Binary Decision Diagram Quantum Circuits
Identification of Graphene Layer Numbers from Color Combination Contrast Image for Wide-Area Characterization
Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
Boolean Logic Gates Utilizing GaAs Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates
Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates
Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates (Special Issue : Microprocesses and Nanotechnology)
GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots
Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors

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