YAMADA Masatsugu | Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
スポンサーリンク
概要
- 同名の論文著者
- Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informatiの論文著者
関連著者
-
HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
-
Yamada M
Mitsubishi Electric Corp. Itami‐shi Jpn
-
TAKAHASHI Hiroshi
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
-
YAMADA Masatsugu
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
-
Yamada M
Kanazawa Univ. Kanazawa‐shi Jpn
-
Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
-
KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
-
Xie Y
Research Center For Interface Quantum Electronics (rciqe) And Graduate School Of Electronics And Inf
-
XIE Yong
Research Center for Integrated Quantum Electronics, and Graduate School of Electronics and Informati
-
Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
著作論文
- Process Charactarization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
- Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well