Kotani Junji | Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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概要
関連著者
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Kotani Junji
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Kotani Junji
Eindhoven Univ. Technol. Eindhoven Nld
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長谷川 英機
北海道大学量子集積エレクトロニクス研究センター
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Hasegawa Hideki
Department Of Electrical Engineering Faculty Of Engineering Hokkaido University:department Of Electr
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Hashizume T
Advanced Research Laboratory Hitachi Ltd.:department Of Physics Tokyo Institute Of Technology
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Faculty Of Engineering Hokkaido University:fac
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Hasegawa H
自治医科大学 臨床検査医学
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Honda Hideyuki
The Faculty Of Medical Science And Welfare Tohoku Bunka Gakuen University
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Kasai S
Graduate School Of Environmental Earth Science Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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KOTANI Junji
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Basile Alberto
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science &
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HASHIZUME Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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長谷川 英機
北海道大学工学部電気工学科
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Hozawa H
Department Of Biomedical Engineering Graduate School Of Biomedical Engineering Tohoku University
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Mizue Chihoko
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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TAMURA Takahiro
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Te
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Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University:(present Address)advanced Research Laborato
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KANEKO Masamitsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hasegawa Haruhiro
Superconductivity Research Laboratory International Superconductivity Technology Center
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葛西 誠也
北海道大学大学院情報科学研究科・量子集積エレクトロニクス研究センター:jstさきがけ
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Kaneko Masamitsu
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Hasegawa Hideki
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Tamura Takahiro
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Kotani Junji
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Kotani Junji
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Kaneko Masamitsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Miczek Marcin
Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Mizue Chihoko
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
著作論文
- Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism
- Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
- Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures
- Effects of surface oxidation of AlGaN on DC characteristics of AlGaN/GaN high-electron-mobility transistors
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
- Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors
- Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
- Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model
- Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model
- Leakage mechanism in GaN and AlGaN Schottky interfaces
- UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors