Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
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概要
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We proposed a surface control process for suppressing the tunneling leakage of Schottky gates on AlGaN/GaN heterostructures. For the recovery of nitrogen-vacancy-related defects and reduction in the amount of oxygen impurities at the AlGaN surface, the process consisted of nitrogen radical treatment, the deposition of an ultrathin Al layer, UHV annealing and finally the removal of the Al layer. Ni/Au Schottky gates fabricated on processed AlGaN surfaces showed pronounced reduction in leakage current and a clear temperature dependence of I-V characteristics, indicating the effective suppression of tunneling leakage in current transport through AlGaN Schottky interfaces.
- Japan Society of Applied Physicsの論文
- 2006-02-25
著者
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Basile Alberto
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Kotani Junji
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Kaneko Masamitsu
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kotani Junji
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Kaneko Masamitsu
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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- FOREWORD
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors