High-temperature and UV-assisted C-V characterization of GaN MIS structures
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume Tamotsu
Res. Center For Integrated Quantum Electronics And Graduate School Of Information Sci. And Technol.
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KATO Hiroki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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MICZEK Marcin
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Miczek Marcin
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kato Hiroki
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
関連論文
- Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
- Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
- Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate(Heterostructure Microelectronics with TWHM2003)
- Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
- Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
- In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
- Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
- Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions
- Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application
- Performance of open-gate AlGaN/GaN HFET in various kinds of liquids
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
- Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors
- Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
- Formation and application of InP porous structures on p-n substrates
- Formation and application of InP porous structures on p-n substrates
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Control of Order Parameter during Growth of In_Ga_P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method
- Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
- Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
- Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K
- Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
- In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2
- Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
- Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well
- X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well
- Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods
- Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods
- Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
- Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
- Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Optical Properties of Size-Controlled Porous Nanostructures Formed on n-InP (001) Substrates by Electrochemical Process
- Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
- Dynamic response of interface state charges in GaN MIS structures
- High-temperature and UV-assisted C-V characterization of GaN MIS structures
- Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
- Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted Selective MBE on Pre-Patterned Substrates
- Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
- Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
- Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer
- Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer
- Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates
- Successful Passivation of Air-Exposed AlGaAs Surfaces by a Silicon Interface Control Layer-Based Technique
- Photoluminescence and X-Ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells Passivated by a Novel Interface Control Technique
- More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
- Impact of Interface States and Bulk Carrier Lifetime on Photocapacitance of Metal/Insulator/GaN Structure for Ultraviolet Light Detection
- Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions
- Modification of Surface State Density Distribution of p-InP Surfaces by Nitrogen Radical Exposure
- In Situ X-Ray Photoelectron Spectroscopy Study of Etch Chemistry of Methane-Based Reactive Ion Beam Etching of InP Using N2
- In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs
- Large Schottky Barrier Heights ort Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
- Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism
- Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN
- Interface Properties of Metal/n-GaN Schottky Contacts
- Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP
- Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures
- Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
- Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching
- Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
- Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal Binary Decision Diagram Quantum Circuits
- UV-Induced Variation of Interface Potential in AlOx/n-GaN Structure
- Observation of Coulomb Blockade Oscillations up to 50K from InP-Based InGaAs Quantum Wires Grown by Molecular Beam Epitaxy
- Transport Characterization of Schottky In-Plane Gate Al_Ga_As/GaAs Quantum Wire Transistors Realized by In-Situ Electrochemical Process
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
- Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition
- Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process
- Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
- Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
- Hydrogen-Sensing Response of Carbon-Nanotube Thin-Film Sensor with Pd Comb-Like Electrodes
- Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
- Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures
- Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
- FOREWORD
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors