Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)

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概要

• 論文の詳細を見る

• We report the electrochemical formation of porous structures on n-type epitaxial layers grown on p-type InP substrates in view of the application to the photoelectric conversion devices. We successfully formed the arrays of regular-sized pores whose diameter and depth could be changed by the doping density and anodic conditions, respectively. From the photo I-V measurements, we confirmed the optical absorption process in the porous layers whose photovoltaic response strongly depended on the structural properties.

• 社団法人電子情報通信学会の論文
• 2010-06-23

著者

• SATO Taketomo

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• 岡崎 拓行

  北海道大学量子集積エレクトロニクス研究センター

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics Hokkaido University

• Sato T

  Hokkaido Univ. Sapporo Jpn

• Sato Taketomo

  Research Center For Integrated Quantum Electronics Hokkaido University

• Sato Taketomo

  Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu

• Sato Taketomo

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• OKAZAKI Hiroyuki

  Research Center for Integrated Quantum Electronics, Hokkaido University

• Sato Taketomo

  Hokkaido Univ. Sapporo Jpn

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Okazaki Hiroyuki

  Research Center For Integrated Quantum Electronics Hokkaido University

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