Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)

スポンサーリンク

概要

• 論文の詳細を見る

• We investigated the electrocatalytic activity of n-type InP porous nanostructures and the feasibility of their functionalization for the biochemical sensor applications. The porous structures have extremely large surface areas over 10m^2/cm^3 and superior electrical properties with conductive semiconductor substrates. The response currents to the addition of H_2O_2 increased on the porous electrodes due to their enlarged surface area, and its sensitivity had good linearity with H_20_2 concentration. As a first attempt of the electrochemical functionalization, glucose oxidase membrane was successfully deposited onto InP surface by adjusting the electrochemical conditions.

• 社団法人電子情報通信学会の論文
• 2008-07-02

著者

• SATO Taketomo

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics Hokkaido University

• Sato T

  Hokkaido Univ. Sapporo Jpn

• Sato Taketomo

  Research Center For Integrated Quantum Electronics Hokkaido University

• Sato Taketomo

  Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu

• Sato Taketomo

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• YOSHIZAWA Naoki

  Research Center for Integrated Quantum Electronics, Hokkaido University

• MIZOHATA Akinori

  Research Center for Integrated Quantum Electronics, Hokkaido University

• Sato Taketomo

  Hokkaido Univ. Sapporo Jpn

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Yoshizawa Naoki

  Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan

関連論文

• Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells
• 平成20年度リフレッシュ理科教室開催報告-サイエンスオリエンテーリング2008 in 札幌- : 北海道支部・北海道大学会場
• Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
• Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
• Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism
• Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure
• Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
• 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
• 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
• Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al_2O_3 Insulated Gate(Heterostructure Microelectronics with TWHM2003)
• Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiN_χ Film(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Nitridation of GaP(100)Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma
• Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma
• In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
• In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
• Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
• Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
• Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices
• Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process (Special Issue: Solid State Devices & Materials)
• Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on(001)InP Surfaces and Their Photoluminescence Characterizations
• Large Modulation of Conductance in Interdigital-Gated HEMT Devices Due to Surface Plasma Wave Interactions
• Large Conductance Modulation in Interdigital Gate HEMT Device due to Surface Plasma Wave Interactions and Its Device Application
• Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates
• Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes
• The Strong Correlation between Interface Microstructure and Barrier Height in Pt/n-InP Schottky Contacts Formed by an In Situ Electrochemical Process
• Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
• Performance of open-gate AlGaN/GaN HFET in various kinds of liquids
• Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
• Electrochemical formation of InP porous structures for their application to photoelectric conversion devices(Session 2B : Graphene and III-Vs)
• Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors
• Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
• Formation and application of InP porous structures on p-n substrates
• Formation and application of InP porous structures on p-n substrates
• Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
• Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
• Amperometric Detection of Hydrogen Peroxide Using InP Porous Nanostructures
• Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
• Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
• Control of Order Parameter during Growth of In_Ga_P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
• Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process
• Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method
• Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
• Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
• Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
• Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
• Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K
• Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
• Hexagonal Binary Decision Diagram Quantum Circuit Approach for Ultra-Low Power III-V Quantum LSIs
• In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2
• Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well
• Fabrication and Characterization of Novel Oxide-Free InP MISFETs Having an Ultra-Narrow Si Surface Quantum Well
• X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well
• Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods
• Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods
• Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
• Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
• Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
• Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy
• Variation of Surface Potentials of Si-Doped Al_xGa_N (O
• Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions
• Optical Properties of Size-Controlled Porous Nanostructures Formed on n-InP (001) Substrates by Electrochemical Process
• Dynamic response of interface state charges in GaN MIS structures
• High-temperature and UV-assisted C-V characterization of GaN MIS structures
• Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
• Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal BDD Quantum Circuits
• Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates
• Investigation of Side-gating Effects in GaAs-based Quantum Wire Transistor (QWRTr) utilizing Nanosized Schottky Gates
• Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates
• Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates
• Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates
• Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
• Cross-Sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates
• Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted Selective MBE on Pre-Patterned Substrates
• Evolution Mechanism of Heterointerface Cross-section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy
• Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
• Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
• Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer
• Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer
• Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs
• Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices
• Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process
• Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates
• Successful Passivation of Air-Exposed AlGaAs Surfaces by a Silicon Interface Control Layer-Based Technique
• Photoluminescence and X-Ray Photoelectron Study of AlGaAs/GaAs Near-Surface Quantum Wells Passivated by a Novel Interface Control Technique
• More than 10^3 Times Photoluminescence Intensity Recovery by Silicon Interface-Control-Layer-Based Surface Passivation of Near-Surface Quantum Wells
• Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures
• Self-assembled formation of uniform InP nanopore arrays by electrochemical anodization in HCl based electrolyte
• Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates
• Formation of High-Density GaAs Hexagonal Nano-wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates
• Large Schottky Barrier Heights ort Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
• Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism
• Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots
• Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching
• Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure
• Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal Binary Decision Diagram Quantum Circuits
• Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water
• Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates
• Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates

もっと見る 閉じる

スポンサーリンク