Dynamic response of interface state charges in GaN MIS structures
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Ooyama Kimihito
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Hashizume Tamotsu
Res. Center For Integrated Quantum Electronics And Graduate School Of Information Sci. And Technol.
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KATO Hiroki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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MICZEK Marcin
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Miczek Marcin
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Ooyama Kimihito
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kato Hiroki
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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- FOREWORD
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors