Simulations of Capacitance–Voltage–Temperature Behavior of Metal/Insulator/AlGaN and Metal/Insulator/AlGaN/GaN Structures
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概要
- 論文の詳細を見る
The effect of electronic states at insulator/AlGaN and AlGaN/GaN interfaces on capacitance–voltage ($C$–$V$) characteristics of a metal/insulator/semiconductor (MIS) capacitor with an AlGaN layer and a metal/insulator/semiconductor heterostructure (MISH) with an AlGaN/GaN heterojunction was studied theoretically taking into account extremely slow electron emission from the deep interface levels. The states at the insulator/AlGaN interface in MIS and at the AlGaN/GaN interface in MISH stretch out the $C$–$V$ curves as usual, whereas the insulator/AlGaN interface states in MISH only shift the characteristics at room temperature and 300 °C (fixed-charge-like behavior). These effects were explained by the different positions of the Fermi level at the studied interfaces. Theoretical $C$–$V$ curves were compared with experimental characteristics, which are available in the literature, measured at room and higher temperatures by the authors and others.
- 2009-04-25
著者
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Mizue Chihoko
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Miczek Marcin
Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
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Mizue Chihoko
Research Center for Integrated Quantum Electronics, Hokkaido University, Kita-13 Nishi-8, Sapporo 060-8628, Japan
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Adamowicz Bogusŀawa
Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
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- FOREWORD
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