Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
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概要
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For the $\langle 001\rangle$-oriented In0.5Ga0.5P/GaAs heterostructure grown by gas source molecular beam epitaxy (GSMBE) using tertiarybutylphosphine (TBP), presence of the natural ordering of group III atoms and its effect on heterointerface properties are investigated for the first time. Using in situ reflection high energy electron diffraction (RHEED) observation and photoluminescence (PL) measurements, growth temperature and growth sequence were optimized to grow high-quality InGaP layers with defect-free heterointerfaces. By PL measurements on $\langle 001\rangle$- and $\langle 311\rangle$-oriented samples simultaneously grown under the same growth conditions, existence of natural ordering in $\langle 001\rangle$-oriented samples was found. The so-called long-range order parameter, $\eta$, of the InGaP layer increased with increase of the TBP flow rate and with decrease of the growth rate. $\eta$ could be changed in the range of 0.06–0.29 by changing the growth conditions, corresponding to the band gap change of 43 meV. The valence band offset ($\Delta E_{\text{V}}$) measured by in situ XPS method was 0.29 eV and was independent of the value of $\eta$. The change of conduction band offset ($\Delta E_{\text{C}}$) due to ordering caused a corresponding change in the sheet carrier density of two-dimensional electron gas at the heterointerface. No significant contribution from piezoelectric or spontaneous polarization was seen up to $\eta=0.29$.
- 2003-04-15
著者
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ishikawa Fumitaro
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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KAKUMU Takaaki
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Informatio
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Kakumu Takaaki
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Ishikawa Fumitaro
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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