Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique
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概要
- 論文の詳細を見る
In order to make the silicon interface control layer (Si ICL)-based surface passivation technique applicable to air-exposed AlGaAs surfaces, various surface treatments were systematically studied. The treatments investigated include UHV thermal cleaning, (NH_4)_2S_x treatment, HCl treatment and H_2 plasma treatment. Chemical status and quality of the treated surfaces were evaluated by in-situ and ex-situ X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements. A strong correlation was found between the band-edge PL intensity and the amount of surface oxide components, in particular Al-oxides. Marked reduction of the amount of oxide components and enhancement of PL intensity were realizable by a combination of HCl surface treatment and Si ICL formation.
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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IKEYA Kengo
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Ikeya Kengo
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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