A Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Kasai Seiya
Research Center For Interface Quantum Electronics And Graduate School Of Engineering Hokkaido Univer
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Hasegawa Hideki
Research Center For Interface Quantum Electronics And Graduate School Of Engineering Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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