Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• We investigate the chemical and potential-bending characteristics of in situ SiNx/AlGaN interfaces prepared by metal-organic chemical vapor deposition. X-ray photoelectron spectroscopy showed that the in situ SiNx layer had typical chemical binding energies corresponding to the Si-N bonds. The in situ SiNx deposition brought no chemical degradation on the AlGaN surface at the SiNx/AlGaN interface, whereas the ex situ deposition of SiNx by a plasma process induced chemical disorder on the AlGaN surface including a composition change and the formation of interfacial oxides. A significant reduction in the surface band bending was observed on the AlGaN surface after the in situ SiNx passivation, probably due to a decrease in the surface state density.

• Japan Society of Applied Physicsの論文
• 2007-06-25

著者

• Ueda Tetsuzo

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Hashizume Tamotsu

  Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc

• Nakazawa Satoshi

  Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.

• Tanaka Tsuyoshi

  Semiconductor Device Research Center Matsushita Electronics Corporation

• Ueda Tetsuzo

  Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan

• Ogawa Eri

  Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan

• Hashizume Tamotsu

  Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan

• Tanaka Tsuyoshi

  Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan

• Nakazawa Satoshi

  Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan

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• FOREWORD
• Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

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