Nakazawa Satoshi | Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
スポンサーリンク
概要
- NAKAZAWA Satoshiの詳細を見る
- 同名の論文著者
- Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.の論文著者
関連著者
-
Ueda Tetsuzo
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Nakazawa Satoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Tanaka Tsuyoshi
Semiconductor Device Research Center Matsushita Electronics Corporation
-
EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
-
Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Tsurumi Naohiro
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Ueda Tetsuzo
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
NISHIJIMA Masaaki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
TAKIZAWA Toshiyuki
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
NAKAZAWA Satoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial, Co. Ltd
-
ANDA Yoshiharu
Semiconductor Device Research Center, Matsushita Electronics Corporation
-
Takizawa Toshiyuki
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
-
Ishida Masahiro
Semiconductor Device Research Center Matsushita Electronics Corporation
-
Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
-
Ueda Tetsuzo
Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan
-
Ueda Tetsuzo
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Nishijima Masaaki
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Ogawa Eri
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
-
Tsurumi Naohiro
Semiconductor Devices Development Center, Industrial Devices Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Hashizume Tamotsu
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan
-
Tanaka Tsuyoshi
Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan
-
Nakazawa Satoshi
Semiconductor Devices Research Center, Matsushita Electric Industrial Company, Takatsuki, Osaka 569-1193, Japan
著作論文
- First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
- 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
- Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In Situ Metal-Organic Chemical Vapor Deposition